| 发明名称 |
Semiconductor Device Structure With 110-PFET and 111-NFET Current Flow Direction |
| 摘要 |
A FinFET comprises a hybrid substrate having a top wafer of (100) silicon, a handle wafer of (110) silicon, and a buried oxide layer between the top wafer and the handle wafer; a first set of fins disposed in the top wafer and oriented in a <110> direction of the (100) silicon; and a second set of fins disposed in the handle wafer and oriented in a <112> direction of the (110) silicon. The first set of fins and the second set of fins are aligned. |
| 申请公布号 |
US2016379894(A1) |
申请公布日期 |
2016.12.29 |
| 申请号 |
US201615246963 |
申请日期 |
2016.08.25 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Hashemi Pouya;Khakifirooz Ali;Mochizuki Shogo;Reznicek Alexander |
| 分类号 |
H01L21/84;H01L21/306;H01L21/762;H01L21/02;H01L29/04;H01L27/12 |
主分类号 |
H01L21/84 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
forming a substrate comprising a top wafer of (100) silicon, a handle wafer of (110) silicon, and a buried oxide layer between the top wafer and the handle wafer, wherein the top wafer and the handle wafer are arranged such that a <110> direction of the (100) silicon of the top wafer aligns with a <112> direction of the (110) silicon of the handle wafer; forming trenches in the top wafer; forming trenches through the top wafer and into the handle wafer; and disposing fins in the trenches. |
| 地址 |
Armonk NY US |
