发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a semiconductor chip having a larger electrode face than traditional one is mounted without changing the size of a package, and which can be utilized for large electric power which needs low forward voltage and high withstand voltage. <P>SOLUTION: The surface-mounting semiconductor device is provided with external electrodes 8 on the bottom and upper surfaces of square ends. In the conventional semiconductor chip 5 to be mounted, its electrode face uses the square bottom and upper surfaces. However, this semiconductor chip 5 having a larger electrode face can be mounted by mounting the semiconductor chip 5 while allowing its electrode face to face the square side face. As a result, it can be utilized for large electric power to use its reduced forward voltage and high withstand voltage. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2005322773(A) 申请公布日期 2005.11.17
申请号 JP20040139591 申请日期 2004.05.10
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TAKESHITA MITSUHIRO
分类号 H01L23/12;(IPC1-7):H01L23/12 主分类号 H01L23/12
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