| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric transducer reducing a crystal boundary capable of increasing a junction area and improving a short-current value and a conversion efficiency, and to provide a manufacturing method for the photoelectric transducer. <P>SOLUTION: In the photoelectric transducer, n-type charge transfer layers 11 and p-type charge transfer layers 12 are laminated and formed successively. The n-type charge transfer layer 11 is composed of the needle crystals 16 of an oxide semiconductor, and the p-type charge transfer layer is composed of conjugated high molecules 17. In the manufacturing method for the optoelectric transducer, the needle crystal layers of the n-type oxide semiconductors and the p-type conjugated high molecular layers are laminated and formed successively. A process is contained in which the p-type conjugated high molecular layers are formed on the needle crystal layers of the n-type oxide semiconductors by a spin coating method. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
