| 摘要 |
PROBLEM TO BE SOLVED: To provide a quantum cascade semiconductor laser having improved in-plane uniformity and reproducibility of reflectance and high yield in a distribution reflection region wider than a mesa waveguide.SOLUTION: A quantum cascade semiconductor laser comprises a laser body region provided on a waveguide area 11b, a distribution reflection region 13 provided on a distribution reflection area 11c, and a distribution reflection region 14 provided on a distribution reflection area 11d. The laser body region 12 comprises a mesa waveguide 17 extending along a waveguide axis. The distribution reflection region 13 includes one or a plurality of semiconductor walls 29 for distribution reflection. The semiconductor wall 29 includes a plurality of first bulk semiconductor regions 33 and a plurality of first laminate regions 35. In the semiconductor wall 29, the first bulk semiconductor regions 33 and the first laminate regions 35 are alternately arranged in a second axis Ax2 direction. The mesa waveguide 17 and the first laminate regions 35 include a first semiconductor structure 23. The semiconductor laminate structure 23 includes a first semiconductor layer 27a for a core layer and a second semiconductor layer 27b for an upper clad layer.SELECTED DRAWING: Figure 1 |
