发明名称 |
Pulsed plasma apparatus and process. |
摘要 |
<p>An apparatus for pulsed plasma treatment of a substrate surface includes means for removing spent gas from a region adjacent the substrate for each pulse. The apparatus may also include means for sweeping an intense plasma region across a substrate surface. Rapid gas exchange is provided by pressure pulsing the gas admission. This facility also provides means for rapidly alternating different gases.</p> |
申请公布号 |
EP0207767(A2) |
申请公布日期 |
1987.01.07 |
申请号 |
EP19860305036 |
申请日期 |
1986.06.27 |
申请人 |
STC PLC |
发明人 |
HEINECKE, RUDOLF AUGUST;OJHA, SURESHCHANDRA MISHRILAL;LLEWELLYN, IAN PAUL |
分类号 |
C23C14/40;C23C16/50;C23C16/511;C23C16/515;C23F4/00;H01J37/32 |
主分类号 |
C23C14/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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