发明名称 Pulsed plasma apparatus and process.
摘要 <p>An apparatus for pulsed plasma treatment of a substrate surface includes means for removing spent gas from a region adjacent the substrate for each pulse. The apparatus may also include means for sweeping an intense plasma region across a substrate surface. Rapid gas exchange is provided by pressure pulsing the gas admission. This facility also provides means for rapidly alternating different gases.</p>
申请公布号 EP0207767(A2) 申请公布日期 1987.01.07
申请号 EP19860305036 申请日期 1986.06.27
申请人 STC PLC 发明人 HEINECKE, RUDOLF AUGUST;OJHA, SURESHCHANDRA MISHRILAL;LLEWELLYN, IAN PAUL
分类号 C23C14/40;C23C16/50;C23C16/511;C23C16/515;C23F4/00;H01J37/32 主分类号 C23C14/40
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