发明名称 |
Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate |
摘要 |
A microwave plasma CVD apparatus for the formation of a functional deposited film includes a gas supply pipe to which a bias voltage is applied so as to form an electric field between the gas supply pipe and a substrate onto which the film is deposited.
|
申请公布号 |
US5129359(A) |
申请公布日期 |
1992.07.14 |
申请号 |
US19900549243 |
申请日期 |
1990.07.09 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
TAKEI, TETSUYA;KATAGIRI, HIROYUKI;SHIRASUNA, TOSHIYASU |
分类号 |
C23C16/44;C23C16/455;C23C16/511;H01J37/32 |
主分类号 |
C23C16/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|