发明名称 Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate
摘要 A microwave plasma CVD apparatus for the formation of a functional deposited film includes a gas supply pipe to which a bias voltage is applied so as to form an electric field between the gas supply pipe and a substrate onto which the film is deposited.
申请公布号 US5129359(A) 申请公布日期 1992.07.14
申请号 US19900549243 申请日期 1990.07.09
申请人 CANON KABUSHIKI KAISHA 发明人 TAKEI, TETSUYA;KATAGIRI, HIROYUKI;SHIRASUNA, TOSHIYASU
分类号 C23C16/44;C23C16/455;C23C16/511;H01J37/32 主分类号 C23C16/44
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