发明名称 Semiconductor device and method of manufacturing the same
摘要 The top surface of an insulating substrate is formed with a plurality of electrodes for bump connection, while the undersurface of the insulating substrate is formed with external terminals which are arranged in an array. On the insulating substrate is provided a semiconductor chip. The undersurface of the semiconductor chip is formed with bump electrodes. The electrodes for bump connection are electrically connected to the bump electrodes by means of a conductive adhesive. The space between the semiconductor chip and the insulating substrate is filled with a resin which integrates the above two and dissipates heat generated from the semiconductor chip.
申请公布号 US5622590(A) 申请公布日期 1997.04.22
申请号 US19950430484 申请日期 1995.04.28
申请人 MATSUSHITA ELECTRONICS CORPORATION 发明人 KUNITOMO, YOSHINOBU;NOZU, MAKOTO;SAKASHITA, YASUYUKI;TSUKAMOTO, MASAHIDE;NAKATANI, SEIICHI;SAEKI, KEIJI;KITAYAMA, YOSHIFUMI
分类号 H01L21/56;H01L21/60;H01L23/13;H01L23/29;H01L23/485;(IPC1-7):B32B7/12;B29C65/54;H01L21/58;H05K3/32 主分类号 H01L21/56
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