| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a diffusion depth of 0.1μm or below and a silicide film formed in a salicide process, while diffusion near a junction metallic interfacial part is prevented. SOLUTION: As ions are implanted to an exposed face of an Si substrate 11, to form a shallow n<+> diffused layer 15 with a depth of about 0.1μm (step a). F or F2 ions are implanted to the n<+> diffused layer 15 to form a gettering region 16 with a peak density position and its profile shallower than a dopant profile of the n<+> diffused layer 15 (step c). After the SiO2 film 14 has been removed, a Ti film 17 of about 15 nm and TiN film 18 of 70 nm are sequentially deposited over the entire substrate (step d). A heat treatment under N2 atmosphere is carried out at a temperature of 600 deg.C for 30 minutes, and Ti silicide 19 is formed (step e). |
