| 摘要 |
PROBLEM TO BE SOLVED: To obtain an interconnection part for an integrated circuit with improved electromigration characteristics. SOLUTION: An interconnection structure part includes titanium lower and upper layers 14 and 20, and the two titanium layers differ from each other in cleanliness. In order to improve electromigration, and to strongly obtain an intermediate layer 18 with texture, the titanium lower layer 14 is not relatively contaminated, and contains a contaminant of at most 5 wt.%. The intermediate layer 18 containing aluminum is formed between the titanium lower and upper layers 14 and 20. The titanium upper layer 20 is relatively more contaminated as compared with the titanium lower layer 14, contains a contaminant of more than 5 wt.%, and contributes to the maintenance of low area resistance. |
