| 摘要 |
PROBLEM TO BE SOLVED: To prevent a semiconductor device from deteriorating in reliability by a method, wherein a transistor capable of recovering its characteristics is in a state where a gate insulating film suffers no damage, even if wirings are formed through an inductively coupled plasma etching method. SOLUTION: In a method of manufacturing a semiconductor device, which is equipped with a first wiring 31 connected to the gate electrode 22 of an insulated gate field effect transistor 21, formed on a semiconductor substrate 11 and a second wiring 32 connected to the semiconductor substrate 11, the first wiring 31 and the second wiring 32 are arranged adjacent to each other, and then the gate insulating film 23 of a transistor 21 is made to recover from damages through a thermal treatment which is carried out at temperatures of 200 or higher to 500 deg.C or lower, in an atmosphere of nitrogen gas or rare gas after the wirings 31 and 32 are formed, through an etching process by the use of an inductively coupled plasma etching device.
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