ELEMENT SUBSTRATE FOR ELECTRO-OPTICAL DEVICE AND MANUFACTURING METHOD THEREFOR, ELECTRO-OPTICAL DEVICE AND MANUFACTURING METHOD THEREFOR AND ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a substrate for an electro-optical device for performing hydrogenation treatment of a silicon film without disturbance, even if there is a conductive film present above a TFT and improving the characteristics of the TFT. SOLUTION: For this substrate for the electro-optical device, storage capacitance 70-1 provided with a capacitance electrode 302 connected to a pixel electrode 9a and a capacitance line 300 arranged in face to face with the capacitance electrode 302 via a dielectric film 301 and turned to a fixed potential is laminated above the TFT 30. Then, of the electrodes of two layers for constituting the storage capacitance 70-1, the capacitance line 300 is provided with an opening part 300a.