Optoelectronic semiconductor body

摘要

An optoelectronic semiconductor body for emitting electromagnetic radiation from the front side with a semiconductor layer sequence and a first electrical contact layer, wherein the semiconductor layer sequence comprises at least one opening that penetrates fully through the semiconductor layer sequence in the direction from the front side to the rear side that is opposite the front side, the first electrical contact layer is arranged at the rear of the semiconductor body, a section of the first electrical contact layer extends from the rear side through the opening to the front side and covers a first sub-region of a front-side main face of the semiconductor layer sequence, and a second sub-region of the front-side main face is not covered by the first electrical contact layer.

主权项

1. An optoelectronic semiconductor body, comprising:
a semiconductor layer sequence comprising exactly one contiguous active layer suitable for generation of electromagnetic radiation; and a first electrical contact layer, wherein: the optoelectronic semiconductor body is a thin-film light emitting diode chip comprising a carrier element which is different from a growth substrate of the semiconductor layer sequence, the active layer comprises a multi quantum well structure to generate electromagnetic radiation; the optoelectronic semiconductor body is configured to emit the electromagnetic radiation from a front side; the semiconductor layer sequence comprises a plurality of openings that penetrate fully through the semiconductor layer sequence, including the exactly one active layer, in a direction from the front side to a rear side that is opposite the front side; the first electrical contact layer is arranged at the rear side of the optoelectronic semiconductor body; an end section of the first electrical contact layer extends from the rear side within the openings to the front side and covers a first sub-region of a front-side main face of the semiconductor layer sequence; a second sub-region of the front-side main face is not covered by the first electrical contact layer; the first electrical contact layer consists of a light-transmissive, electrically conductive material at least in the end section extending from the rear side within the openings to the front side and covering the first sub-region of the front-side main face of the semiconductor layer sequence; the optoelectronic semiconductor body further comprises a second electrical contact layer that is also located at the rear side and that is electrically insulated from the first electrical contact layer by a separating layer; the first electrical contact layer, the second electrical contact layer and the separating layer overlap laterally in a region of the rear side of the optoelectronic semiconductor body; and within the openings, the separating layer is, in a lateral direction, arranged between the light-transmissive, electrically conductive material of the first electrical contact layer and the semiconductor layer sequence.