| 摘要 |
PURPOSE:To prevent the disconnection of the Al wiring formed on a polycrystalline Si film by method wherein a heat treatment is performed introducing a P-ion therein after the polycrystalline Si film has been formed. CONSTITUTION:An SiO2 film 2 to be used for interlayer isolation and an N-layer 3, to be formed by P-diffusion, are formed on a P type Si substrate 1. A PSG is covered on the above, an aparture is provided on the prescribed pattern, and a polycrystalline Si 5 is deposited thereon. Then, a P-ion of 1X10<10>/cm<2> or more is implanted, and a heat treatment is performed in a non-oxidizing atmoshere at 900 deg.C for approximately 30min. Then, an Al wiring film is evaporated and processed in a non-oxidizing atmosphere at 450 deg.C. According to this constitution, nuclei are formed by the Si atoms entering into the Al wiring while the heat treatment is performed and the phenomenon, wherein the electric resistance will be locally increased, at the part which has been turned into nuclei is removed and this enables to prevent the occurence of the disconnection of the Al wiring film. |
