| 摘要 |
PURPOSE:To prevent the rediffusion of impurity by unnecessitating high-temperature heat treatment by a method wherein a heat-resisting insulation film is applied on the upper surface of a gate electrode and the surfaces of a source and a drain, and the gate electrode and the surfaces of the source and the drain are exposed by uniform etching of the entire surface. CONSTITUTION:A field insulation film 3 and a gate insulating film 2 are formed on the surface of an Si substrate 1. Next, the conductive gate electrode 4 is formed on the insulation film 2, and the source and drain regions 6 are formed by impurity doping with the gate electrode 4 as a mask. Then, the insulation film 2 on the source and drain regions 6 is removed. The entire surface is coated with the heat-resisting insulation film 9. The gate electrode 4 and the surface of the region 6 are exposed by uniform etching of the insulation film 9, and then a high melting point metal or its silicide film 8 is deposited at the exposed part. |
