Semiconductor device and method for manufacturing the same

摘要

A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor film including a first region, a pair of second regions in contact with side surfaces of the first region, and a pair of third regions in contact with side surfaces of the pair of second regions; a gate insulating film provided over the oxide semiconductor film; and a first electrode that is over the gate insulating film and overlaps with the first region. The first region is a CAAC oxide semiconductor region. The pair of second regions and the pair of third regions are each an amorphous oxide semiconductor region containing a dopant. The dopant concentration of the pair of third regions is higher than the dopant concentration of the pair of second regions.

主权项

1. A semiconductor device comprising:
a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film, the oxide semiconductor film comprising:
a first region;a pair of second regions, the first region located between the pair of second regions; anda pair of third regions, the first region and the pair of second regions located between the pair of third regions; and an insulating film overlapped with the first region, wherein the pair of second regions is overlapped with the gate electrode, wherein a crystallinity of the first region and a crystallinity of the pair of third regions are higher than a crystallinity of the pair of second regions.