| 发明名称 |
METHOD FOR PASSIVATING THE RESONATOR END FACES OF SEMICONDUCTOR LASERS ON THE BASIS OF III-V SEMICONDUCTOR MATERIAL |
| 摘要 |
The invention relates to a method for passivating resonator end faces, especially the facets of semiconductor laser diodes by high temperature epitaxy of the quaternary compound semiconductor InxGa1-xAsyP1-y, including all stoichiometrically possible compounds, namely (0 </= x </= 1 and 0 </= y </= 1). In order to passivate the InxGa1-xAsyP1-y an additional passivation layer can be applied in situ, that is in the epitaxy installation or in a directly succeeding installation. The semiconductor crystal is brought to the temperature required for epitaxy by heating it in a device according the invention. In order to prevent the contact metal from being destroyed during epitaxy, the sequence of steps of the process is modified so that the metal is deposited only after cleavage and passivation. The metal is deposited on the passivated laser bar using a specific apparatus that facilitates deposition of metal on the entire surface of the laser and that at the same time prevents the facets from being metallized. The invention is used in the production of high-performance laser diodes. The passivation according to the invention substantially increases the service life of the laser diode and allows for a high optical output power of the laser light that is emitted from the passivated mirror facets. The method of the invention is especially useful for producing reliable, high-performance pump lasers for erbium-doped fiber amplifiers. |
| 申请公布号 |
WO0227875(A2) |
申请公布日期 |
2002.04.04 |
| 申请号 |
WO2001DE03723 |
申请日期 |
2001.09.25 |
| 申请人 |
LUMICS GMBH;HAEUSLER, KARL;KIRSTAEDTER, NILS;EBERL, KARL |
发明人 |
HAEUSLER, KARL;KIRSTAEDTER, NILS;EBERL, KARL |
| 分类号 |
H01S5/02;H01S5/028;H01S5/042 |
主分类号 |
H01S5/02 |
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