| 摘要 |
PURPOSE: A GaN based laser diode is provided to be capable of stably oscillating for noise light and being used as a light source of a light recorder. CONSTITUTION: A GaN based laser diode is provided with a substrate(11) and a predetermined structure. The predetermined structure is completed by sequentially depositing the first clad layer(13), the first optical waveguide layer(14), an active layer(15), the second optical waveguide layer(16), and the second clad layer(18). A ridge is formed at the center portion of the second optical waveguide layer and a current restricting layer(17) is formed at both sides of the ridge of the second optical waveguide layer. At this time, the current restricting layer is made of an AlyGa1-yN layer. Preferably, the 'y' of the AlyGa1-yN layer is larger than 0.25.
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