| 摘要 |
<p>A superconducting transistor comprises a superconducting collector layer (1) a first barrier layer (2) provided on the superconducting collector layer (1), a superconducting base layer (3) provided on the first barrier layer (2), a second barrier layer (4) provided on the superconducting base layer (3), and a superconducting emitter layer (5) provided on the second barrier layer (4). All of the layers (1-5) are formed of substances having the same component elements but the composition differs from one layer to the next. The barrier layers (2, 4) have a low carrier concentration and do not have superconducting properties whilst the collector (1), base (3) and emitter (5) layers have a high carrier concentration and exhibit superconducting properties. The superconducting collector layer (1) draws out quasi-particles from the superconducting base layer (3) whilst its carrier concentration is maintained at a level lower than that in metal and at a high level where a superconducting property, is exhibited.</p> |
