SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device is disclosed. The semiconductor device includes: a substrate having a gate structure thereon and a first interlayer dielectric (ILD) layer surrounding the gate structure; a first hard mask on the gate structure; and a second hard mask on the gate structure, wherein the first hard mask is adjacent to two sides of the second hard mask and the first hard mask and the first hard mask comprises silicon nitride.