| 摘要 |
FIELD: plasma engineering, method is mainly used in processes of vacuum metallization of surface and in synthesis of inorganic films in beam-plasma discharge. SUBSTANCE: transporting and positioning device with base and target of solid substance are situated in working chamber, chamber air is evacuated, fill it with working gas and form vapor stream in zone of base surface treatment. Stream of vapor is produced in process of evaporation of solid substance target by stationary electronic beam. At least one more additional electronic beam is formed in chamber and directed in base surface treatment zone. In the case axis of additional electronic beam crosses axis of vapor stream. It is provided, that additional solid substance is fed in additional electronic beam, its evaporation and direction to base surface of chemically active particles flow made of mixture of solid substances vapors and working gas. It is advantageous to form additional electronic beam of band-type configuration. EFFECT: improved quality of coating. 3 cl, 1 dwg |
