A II-VI semiconductor device is fabricated using a selective etchant in the form of aqueous solution of HX where X is Cl or Br. The II-VI semiconductor device is composed of a number of layers. Selective etching can be enabled by introducing Mg into one of the semiconductor layers. The resultant device may include a semiconductor layer containing Mg.
申请公布号
WO9815996(A1)
申请公布日期
1998.04.16
申请号
WO1997US17364
申请日期
1997.09.26
申请人
MINNESOTA MINING AND MANUFACTURING COMPANY
发明人
HAASE, MICHAEL, A.;BAUDE, PAUL, F.;MILLER, THOMAS, J.