发明名称 Memory device with reduced refresh noise
摘要 A memory device capable of reducing refresh noise generated in refreshing a plurality of memory cell blocks at the same time is provided. The memory device includes a plurality of memory cell blocks, a block select unit, and a row decoder. Each of memory cell blocks includes a plurality of sub-memory cell array blocks, and the block select unit outputs a plurality of block select signals corresponding to a plurality of control signals generated by a block select address. The row decoder selects at least one memory cell block corresponding to at least one block select signal activated among the plurality of the block select signals and activates a word line of a memory cell block selected by responding to a row address.
申请公布号 US6563756(B2) 申请公布日期 2003.05.13
申请号 US20010993770 申请日期 2001.11.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM GYU HONG
分类号 G11C7/02;G11C11/406;(IPC1-7):G11C7/00 主分类号 G11C7/02
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