| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to prevent a short-circuit defect caused by a bridge phenomenon occurring between storage nodes by avoiding a tilt of the storage node. CONSTITUTION: After a gate is formed on a semiconductor substrate with an underlying structure, a plug is formed on the substrate between the gates. After an interlayer dielectric(140) is formed on the resultant structure, a storage node contact(160) is formed on the plug in the interlayer dielectric. After the first insulation layer is formed on the resultant structure, an etch stop layer is formed on the first insulation layer. The second insulation layer is formed on the etch stop layer. The second insulation layer, the etch stop layer and the first insulation layer are partially removed to form a contact hole for forming a storage node(260) exposing the upper surface of the storage node contact. The side surface of the first insulation layer in the contact hole is partially removed to form a recess part in the lower part of the contact hole. The storage node is formed in the contact hole. After the second insulation layer is removed, a storage node oxide layer(280) is formed on the storage node. A node layer is formed on the storage node oxide layer.
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