| 摘要 |
PURPOSE:To prevent hFE from decreasing due to an increase in a collector current by forming an N-type semiconductor region having higher density than other region under a P-type emitter region for forming a lateral transistor. CONSTITUTION:A lateral transistor has a P<+> type collector region 9 and an emitter region 8 on the surface of a low density N<-> type epitaxial layer 4 formed on a semiconductor substrate 1. Further, an N<+> type base leading region 11 is formed on the layer 4. Electrodes 13a-13c are formed at the regions 11, 8, 9. An N-type semiconductor region 6 having higher density than the other is formed between the region 8 and an N<+> type buried layer. Thus, a wasteful base current being caused to flow from the region 8 to a buried layer 2 reduces to prevent hFE from decreasing owing to an increase in the collector current. |
