CAPPED ALD FILMS FOR DOPING FIN-SHAPED CHANNEL REGIONS OF 3-D IC TRANSISTORS

摘要

Disclosed herein are methods of doping a fin-shaped channel region of a partially fabricated 3-D transistor on a semiconductor substrate. The methods may include forming a multi-layer dopant-containing film on the substrate, forming a capping film comprising a silicon carbide material, a silicon nitride material, a silicon carbonitride material, or a combination thereof, the capping film located such that the multi-layer dopant-containing film is located in between the substrate and the capping film, and driving dopant from the dopant-containing film into the fin-shaped channel region. Multiple dopant-containing layers of the film may be formed by an atomic layer deposition process which includes adsorbing a dopant-containing film precursor such that it forms an adsorption-limited layer on the substrate and reacting adsorbed dopant-containing film precursor. Also disclosed herein are multi-station substrate processing apparatuses for doping the fin-shaped channel regions of partially fabricated 3-D transistors.

主权项

1. A method of doping a fin-shaped channel region of a partially fabricated 3-D transistor on a semiconductor substrate, the method comprising:
(a) forming a dopant-containing film on the substrate, wherein multiple dopant-containing layers of the film are formed by an atomic layer deposition process comprising:
(i) adsorbing a dopant-containing film precursor onto the substrate such that the precursor forms an adsorption-limited layer on the substrate;(ii) removing at least some unadsorbed dopant-containing film precursor from the volume surrounding the adsorbed precursor;(iii) reacting adsorbed dopant-containing film precursor, after removing unadsorbed precursor in (ii), to form a dopant-containing layer on the substrate;(iv) removing desorbed dopant-containing film precursor and/or reaction by-product from the volume surrounding the dopant-containing layer when present after reacting the adsorbed precursor; and(v) repeating (i) through (iv) to form multiple dopant-containing layers of the dopant-containing film; (b) forming a capping film comprising a silicon carbide material, a silicon nitride material, a silicon carbonitride material, or a combination thereof, the capping film located such that the dopant-containing film formed in (a) is located in between the substrate and the capping film; and (c) driving dopant from the dopant-containing film into the fin-shaped channel region.