| 发明名称 |
TREATMENT METHOD FOR MODIFYING THE REFLECTED COLOUR OF A SAPPHIRE MATERIAL SURFACE |
| 摘要 |
A treatment method for modifying the reflected colour of a sapphire material surface comprising bombardment by a single- and/or multi-charged gas ion beam so as to modify the reflected colour of the treated sapphire material surface, wherein the ions are selected from ions of the elements from the list consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), boron (B), carbon (C), nitrogen (N), oxygen (O), fluorine (F), silicon (Si), phosphorus (P) and sulphur (S). |
| 申请公布号 |
US2017114442(A1) |
申请公布日期 |
2017.04.27 |
| 申请号 |
US201515312583 |
申请日期 |
2015.05.22 |
| 申请人 |
QUERTECH |
发明人 |
Guernalec Frederic;Busardo Denis |
| 分类号 |
C23C14/00;C30B33/04;G02B1/02;C01F7/02;G02B1/11;G02B1/12;C30B29/20;C23C14/48 |
主分类号 |
C23C14/00 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A treatment method for modifying the reflected colour of a sapphire material surface comprising bombardment by a single- and/or multi-charged gas ion beam so as to produce an ion implanted layer in the sapphire material, wherein:
the acceleration voltage is chosen in a range between 5 kV and 1000 kV; the dose of implanted single- and/or multi-charged gas ions per unit of surface area of each ion beam is chosen in a range between 1012 ions/cm2 and 1018 ions/cm2; and, the dose of implanted single- and/or multi-charged gas ions and the acceleration voltage are further chosen so that to obtain a modified reflected colour of the treated sapphire material surface compared to the untreated sapphire material surface; and, the ions of the single- and/or multi-charged gas ions are selected from ions of the elements from the list consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), boron (B), carbon (C), nitrogen (N), oxygen (O), fluorine (F), silicon (Si), phosphorus (P) and sulphur (S). |
| 地址 |
Caen FR |
