Simple Approach For Preparing Post-Treatment-Free Solution Processed Non-Stoichiometric Niox Nanoparticles As Conductive Hole Transport Materials

摘要

High-quality non-stoichiometric NiOx nanoparticles are synthesized by a facile chemical precipitation method. The NiOx film can function as an effective p-type semiconductor or hole transport layer (HTL) without any post-treatments, while offering wide temperature applicability from room-temperature to 150° C. For demonstrating the potential applications, high efficiency is achieved in organic solar cells using NiOx HTL. Better performance in NiOx based organic light emitting diodes is obtained as compared to devices using PEDOT:PSS. The solution-processed NiOx semiconductors at room temperature can favor a wide-range of applications of large-area and flexible optoelectronics.

主权项

1. A method for preparing non-stoichiometric NiOx nanoparticles, with a composition of NiO (Ni2+), NiOOH (Ni3+), and Ni2O3 (Ni3+), wherein the method comprises:
using a base to react with Ni ions in water to form an electrically insulated and undispersed intermediate; grinding the intermediate to form it into a uniform grain size; combusting the intermediate in air to cause oxygen to interact with a nickel-deficient lattice and further form non-stoichiometric NiOx nanoparticles.