| 发明名称 | Method of manufacturing a semiconductor device | ||
| 摘要 | According to one embodiment, a method of manufacturing a semiconductor device comprises forming a semiconductor layer on a substrate, forming a first insulating film on the semiconductor layer, forming a metal layer on the first insulating film, forming a first portion and a second portion in the metal layer, implanting an impurity into the semiconductor layer by using the first portion and the second portion as masks, forming a gate electrode by reducing the second portion in addition to removing the first portion, and implanting an impurity into the semiconductor layer by using the gate electrode as a mask. | ||
| 申请公布号 | US9620624(B2) | 申请公布日期 | 2017.04.11 |
| 申请号 | US201615049469 | 申请日期 | 2016.02.22 |
| 申请人 | Japan Display Inc. | 发明人 | Kawamura Shinichi |
| 分类号 | H01L21/8242;H01L29/66;H01L21/266;H01L21/3213 | 主分类号 | H01L21/8242 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A method of manufacturing a semiconductor device comprising: forming a semiconductor layer on a substrate; forming a first insulating film on the semiconductor layer; forming a metal layer on the first insulating film; forming a first portion and a second portion in the metal layer; implanting an impurity into the semiconductor layer by using the first portion and the second portion as masks; forming a gate electrode by reducing the second portion in addition to removing the first portion; and implanting an impurity into the semiconductor layer by using the gate electrode as a mask. | ||
| 地址 | Minato-ku JP | ||