发明名称 |
Method for fabricating a semiconductor device including fin relaxation, and related structures |
摘要 |
Methods of fabricating semiconductor structures involve the formation of fins for finFET transistors having different stress/strain states. Fins of one stress/strain state may be employed to form n-type finFETS, while fins of another stress/strain state may be employed to form p-type finFETs. The fins having different stress/strain states may be fabricated from a common layer of semiconductor material. Semiconductor structures and devices are fabricated using such methods. |
申请公布号 |
US9620626(B2) |
申请公布日期 |
2017.04.11 |
申请号 |
US201414272660 |
申请日期 |
2014.05.08 |
申请人 |
SOITEC;STMICROELECTRONICS, INC. |
发明人 |
Allibert Frédéric;Morin Pierre |
分类号 |
H01L29/66;H01L21/02;H01L29/205;H01L21/8238;H01L21/84 |
主分类号 |
H01L29/66 |
代理机构 |
TraskBritt |
代理人 |
TraskBritt |
主权项 |
1. A method of fabricating a semiconductor device, comprising:
forming at least one strained first fin in a layer of strained semiconductor material overlying an insulating layer on a base substrate, the at least one strained first fin having a first length below a critical length Lc below which the strained semiconductor material of the at least one strained first fin relaxes upon subsequently conducting a heat treatment between 950° C. and 1250° C.; after forming the at least one strained first fin, conducting the heat treatment between 950° C. and 1250° C., the heat treatment causing relaxation of stress within the at least one strained first fin so as to form at least one relaxed first fin; and forming at least one strained second fin in the layer of strained semiconductor material; wherein the at least one strained second fin has a second length above the critical length Lc such that the at least one strained second fin does not relax while conducting the heat treatment between 950° C. and 1250° C., or the at least one strained second fin is formed after conducting the heat treatment. |
地址 |
Bernin FR |