发明名称 |
Gate stack formed with interrupted deposition processes and laser annealing |
摘要 |
Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous. |
申请公布号 |
US9613866(B2) |
申请公布日期 |
2017.04.04 |
申请号 |
US201615155474 |
申请日期 |
2016.05.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Ando Takashi;Dasgupta Aritra;Gluschenkov Oleg;Kannan Balaji;Kwon Unoh |
分类号 |
H01L21/20;H01L21/8234;H01L21/02;H01L21/225;H01L27/088;H01L29/51;H01L21/8238 |
主分类号 |
H01L21/20 |
代理机构 |
Roberts, Mlotkowski Safran Cole & Calderon, P.C. |
代理人 |
Meyers Steven;Calderon Andrew M.;Roberts, Mlotkowski Safran Cole & Calderon, P.C. |
主权项 |
1. A method comprising a millisecond anneal to crystallize a lower portion of a high-k dielectric material with a top layer of the high-k dielectric material being amorphous, with restriction of a substrate preheat temperature during the millisecond anneal to below 600° C. |
地址 |
Armonk NY US |