发明名称 |
GERMANIUM-CONTAINING SEMICONDUCTOR DEVICE AND METHOD OF FORMING |
摘要 |
A germanium-containing semiconductor device and a method for forming a germanium-containing semiconductor device are described. The method includes providing a germanium-containing substrate, depositing an aluminum-containing diffusion barrier layer on the germanium-containing substrate, depositing a high-k layer on the aluminum-containing diffusion barrier layer, and exposing the high-k layer to atomic oxygen to reduce the equivalent oxide thickness (EOT) of the high-k layer while avoiding oxidizing the germanium-containing substrate. The germanium-containing semiconductor device includes a germanium-containing substrate, an aluminum-containing diffusion barrier layer on the germanium-containing substrate, and a high-k layer on the aluminum-containing diffusion barrier layer, where the high-k layer has been exposed to atomic oxygen to reduce the EOT of the high-k layer while avoiding oxidizing the germanium-containing substrate. |
申请公布号 |
WO2017049145(A1) |
申请公布日期 |
2017.03.23 |
申请号 |
WO2016US52227 |
申请日期 |
2016.09.16 |
申请人 |
TOKYO ELECTRON LIMITED;TOKYO ELECTRON U.S. HOLDINGS, INC. |
发明人 |
TAPILY, Kandabara N.;CLARK, Robert D.;CONSIGLIO, Steven P.;WAJDA, Cory;LEUSINK, Gerrit J. |
分类号 |
H01L21/02;H01L21/04;H01L29/78 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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