发明名称 SEMICONDUCTOR ANALYSIS CHIP AND PARTICLE INSPECTION METHOD
摘要 According to one embodiment, a semiconductor analysis chip for detecting a particle in a sample liquid includes a semiconductor substrate, a first flow channel provided in a surface portion of the semiconductor substrate, a second flow channel provided in a surface portion of the semiconductor substrate, part of the second flow channel contacting or intersecting the first flow channel, a micropore provided in a contact portion or an intersection of the first and second flow channels, and configured to permit the particle to pass therethrough, a first electrode provided in the first flow channels, a second electrode provided in the second passage, and a third electrode provided in the first flow channel downstream of the first electrode.
申请公布号 US2017074824(A1) 申请公布日期 2017.03.16
申请号 US201615058896 申请日期 2016.03.02
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KOBAYASHI Kentaro;HAMASAKI Hiroshi;NAKAMURA Naofumi
分类号 G01N27/447;G01N15/10 主分类号 G01N27/447
代理机构 代理人
主权项 1. A semiconductor analysis chip for detecting a particle in a sample liquid, the chip comprising: a semiconductor substrate; a first flow channel provided in a surface portion of the semiconductor substrate and including an end portion of the first flow channel at a liquid introduction side and another end portion of the first flow channel at a liquid discharge side; a second flow channel provided in a surface portion of the semiconductor substrate and including an end portion of the second flow channel at a liquid introduction side and another end portion of the second flow channel at a liquid discharge side, part of the second flow channel contacting or intersecting the first flow channel; a micropore provided in a contact portion or an intersection of the first and second flow channels, and configured to permit the particle to pass therethrough; a first electrode provided in the first flow channel; a second electrode provided in the second flow channel; and a third electrode provided in the first flow channel downstream of the first electrode.
地址 Tokyo JP