发明名称 |
STAGGERED POWER STRUCTURE IN A POWER DISTRIBUTION NETWORK (PDN) |
摘要 |
Some novel features pertain to an integrated device that includes a first metal layer and a second metal layer. The first metal layer includes a first set of regions. The first set of regions includes a first netlist structure for a power distribution network (PDN) of the integrated device. The second metal layer includes a second set of regions. The second set of regions includes a second netlist structure of the PDN of the integrated device. In some implementations, the second metal layer further includes a third set of regions comprising the first netlist structure for the PDN of the integrated device. In some implementations, the first metal layer includes a third set of regions that includes a third netlist structure for the PDN of the integrated device. The third set of regions is non-overlapping with the first set of regions of the first metal layer. |
申请公布号 |
EP3138127(A1) |
申请公布日期 |
2017.03.08 |
申请号 |
EP20150721960 |
申请日期 |
2015.04.28 |
申请人 |
Qualcomm Incorporated |
发明人 |
LANE, Ryan David;LI, Yue;PAYNTER, Charles David;ZANG, Ruey Kae |
分类号 |
H01L23/50;H01L23/528;H05K1/02 |
主分类号 |
H01L23/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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