发明名称 STAGGERED POWER STRUCTURE IN A POWER DISTRIBUTION NETWORK (PDN)
摘要 Some novel features pertain to an integrated device that includes a first metal layer and a second metal layer. The first metal layer includes a first set of regions. The first set of regions includes a first netlist structure for a power distribution network (PDN) of the integrated device. The second metal layer includes a second set of regions. The second set of regions includes a second netlist structure of the PDN of the integrated device. In some implementations, the second metal layer further includes a third set of regions comprising the first netlist structure for the PDN of the integrated device. In some implementations, the first metal layer includes a third set of regions that includes a third netlist structure for the PDN of the integrated device. The third set of regions is non-overlapping with the first set of regions of the first metal layer.
申请公布号 EP3138127(A1) 申请公布日期 2017.03.08
申请号 EP20150721960 申请日期 2015.04.28
申请人 Qualcomm Incorporated 发明人 LANE, Ryan David;LI, Yue;PAYNTER, Charles David;ZANG, Ruey Kae
分类号 H01L23/50;H01L23/528;H05K1/02 主分类号 H01L23/50
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