| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermoelectric power enhancement method capable of enhancing power generation capacity of a thermoelectric semiconductor device, by confirming the fact that the stress state in a thermoelectric material changes by the presence or absence of a protective film due to introduction of EM, and affects the thermoelectric effect, in a semiconductor thin film.SOLUTION: We found a fact that the thermoelectric power increases due to introduction of EM, when there is a polyimide protective film in a Bi-Sb-Te test piece 10 when compared with a case where there is no polyimide protective film. It is considered that the thermoelectric power increases due to the stress gradient in the test piece 10. In a thermoelectric semiconductor device 15 having a test piece 10 formed on an SOcoated substrate 11, and a polyimide protective coat 12 formed on the test piece 10, thermoelectric power of the thermoelectric semiconductor device 15 can be enhanced by conducting a predetermined high density current between one end side, i.e., the cathode side, of the test piece 10 and the other end side, i.e., the anode side, thereof, thereby introducing EM. |
