| 发明名称 | Thin film transistor array panel and manufacturing method thereof | ||
| 摘要 | A thin film transistor array panel includes a substrate, a first gate electrode disposed on the substrate, a voltage wire disposed on the substrate, a gate insulating layer disposed on the first gate electrode and the voltage wire, a semiconductor pattern including an oxide semiconductor material disposed on the gate insulating layer, a source electrode and a drain electrode disposed at a distance from each other on the semiconductor pattern, a first passivation layer disposed on the source electrode and the drain electrode, and a first electrode disposed on the first passivation layer and connected with the voltage wire. | ||
| 申请公布号 | US9589993(B2) | 申请公布日期 | 2017.03.07 |
| 申请号 | US201514984448 | 申请日期 | 2015.12.30 |
| 申请人 | Samsung Display Co., Ltd. | 发明人 | Lee Hyeon Jun;Abe Katsumi;Lee Young-Wook |
| 分类号 | H01L29/10;H01L27/12;H01L29/24;H01L23/528;H01L23/31;H01L29/66;H01L29/786;H01L21/56;H01L21/768 | 主分类号 | H01L29/10 |
| 代理机构 | H.C. Park & Associates, PLC | 代理人 | H.C. Park & Associates, PLC |
| 主权项 | 1. A thin film transistor array panel, comprising: a substrate; a first gate electrode disposed on the substrate; a voltage wire disposed on the substrate; a gate insulating layer disposed on the first gate electrode and the voltage wire; a semiconductor pattern disposed on the gate insulating layer, the semiconductor pattern comprising an oxide semiconductor material; a source electrode and a drain electrode disposed at a distance from each other on the semiconductor pattern; a first passivation layer disposed on the source electrode and the drain electrode; and a first electrode disposed on the first passivation layer overlapping the first gate electrode and the first electrode is connected with the voltage wire. | ||
| 地址 | Yongin-si KR | ||