HYBRID MULTI-JUNCTION PHOTOVOLTAIC CELLS AND ASSOCIATED METHODS

摘要

A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

主权项

1. A method of making a photovoltaic device, comprising:
depositing a transparent conductor layer; depositing a heterojunction partner layer; depositing a layer of Cadmium Selenide; coating the layer of Cadmium Selenide with a solution comprising a solvent and at least one of chloride selected from the group consisting of chlorides of Group IA elements, chlorides of group IB elements, and chlorides of Group IIIB elements; heating the layer of Cadmium Selenide in an environment having an ambient temperature of between 300 and 500 degrees Celsius for a time between three and thirty minutes while at least partially preventing the evaporation of Selenium from the layer of Cadmium Selenide; and depositing a contact layer.