发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A property of a semiconductor device having a non-volatile memory is improved. A semiconductor device, which has a control gate electrode part and a memory gate electrode part placed above a semiconductor substrate of a non-volatile memory, is configured as follows. A thick film portion is formed in an end portion of the control gate insulating film on the memory gate electrode part side, below the control gate electrode part. According to this configuration, even when holes are efficiently injected to a comer portion of the memory gate electrode part by an FN tunnel erasing method, electrons can be efficiently injected to the comer portion of the memory gate electrode part by an SSI injection method. Thus, a mismatch of the electron/hole distribution can be moderated, so that the retention property of the memory cell can be improved. |
申请公布号 |
EP3136424(A2) |
申请公布日期 |
2017.03.01 |
申请号 |
EP20160184770 |
申请日期 |
2016.08.18 |
申请人 |
Renesas Electronics Corporation |
发明人 |
Arigane, Tsuyoshi;Hisamoto, Digh |
分类号 |
H01L21/28;H01L27/11565;H01L27/1157;H01L27/11573;H01L29/423;H01L29/66;H01L29/792 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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