| 摘要 |
A self-referenced MRAM cell (1) comprises a first portion (2') of a magnetic tunnel junction (2) including a storage layer (23); a second portion (2") of the magnetic tunnel junction portion (2) including a tunnel barrier layer (22), a sense layer (21) and a seed layer (25); the seed layer (25) comprising a material having high spin-orbit coupling such that passing a sense current (32) along the plane of the sense layer (21) and/or seed layer (25) exerts a spin-orbit torque adapted for switching a sense magnetization (210) of the sense layer. A memory device comprising a plurality of the MRAM cells and a method for operating the memory device are also disclosed. |
