| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which can improve reflectance of light to a substrate side, which is irradiated from a light emitting layer to on an electrode formation surface side, to improve light extraction efficiency of a semiconductor light-emitting element.SOLUTION: A flip-chip semiconductor light-emitting element including a translucent substrate 1, and a semiconductor layer in which at least a first conductivity type semiconductor layer 2, a light-emitting layer 3 and a second conductivity type semiconductor layer 4 are laminated on the substrate in this order comprises: a transparent electrode 5 on the second conductivity type semiconductor layer; a multilayer reflection film 8 which is formed on the transparent electrode and in which layers composed of dielectrics having different refraction factors from each other are alternately laminated; a first reflection film 10a which is formed on the multilayer reflection film and composed of metal having a high reflection factor against light from the light-emitting layer; an insulation film 11 formed on the first reflection film; and a second reflection film 13 formed on the insulation film at a position where at least the first reflection film is not formed in sectional view. |
