Layout design system, semiconductor device fabricated by using the system and method for fabricating the semiconductor device

摘要

A layout design system for designing a semiconductor device includes a processor, a storage module storing an intermediate design, and a correction module used by the processor to correct the intermediate design. The intermediate design includes an active region and dummy designs on the active region. Each dummy design includes a dummy structure and dummy spacers disposed at opposite sides of the dummy structure. The correction module is configured to alter widths of regions of at least some of the dummy designs. The corrected design is used to produce a semiconductor device having an active fin, a hard mask layer disposed on the active fin, a gate structure crossing the over the hard mask layer, and a spacer disposed on at least one side of the gate structure. The hard mask layer, and the active fin, are provided with widths that vary due to the dummy designs.

主权项

1. A semiconductor device comprising:
an active fin extending longitudinally in a first direction, the active fin protruding upwardly from an active surface of an active layer, and the fin having an upper surface remote from said active surface of the active layer; a hard mask layer disposed on the active fin, the hard mask layer being spaced from said active surface from which the fin protrudes so as to be out of contact with said active surface; a gate structure extending longitudinally, in a second direction crossing the first direction, on the hard mask layer; and a spacer disposed on at least one side of the gate structure, wherein the hard mask layer occupies a first region and a second region adjacent to the first region in the first direction, the second region extends under the gate structure, the hard mask layer has a bottom surface substantially matching the top surface of the active fin in the first and second regions, and a width, in the second direction, of the hard mask layer in the first region is less than a width, in the second direction, of the hard mask layer in the second region.