发明名称 SEMICONDUCTOR DEVICES INCLUDING BACK-SIDE INTEGRATED CIRCUITRY
摘要 Semiconductor devices may include a semiconductor substrate comprising at least one of transistors and capacitors may be located at an active surface of the semiconductor substrate. An imperforate dielectric material may be located on the active surface, the imperforate dielectric material covering the at least one of transistors and the capacitors. Electrically conductive material in contact openings may be electrically connected to the at least one of transistors and capacitors and extend to a back side surface of the semiconductor substrate. Laterally extending conductive elements may extend over the back side surface of the semiconductor substrate and may be electrically connected to the conductive material in the contact openings. At least one laterally extending conductive element may be electrically connected to a first transistor or capacitor and may extend laterally underneath a second, different transistor or capacitor to which the laterally extending conductive element is not electrically connected.
申请公布号 US2017040375(A1) 申请公布日期 2017.02.09
申请号 US201615299103 申请日期 2016.10.20
申请人 Micron Technology, Inc. 发明人 Kirby Kyle K.;Oliver Steve
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. A semiconductor device, comprising: a semiconductor substrate comprising an active surface and an opposing back side surface; at least one capacitor at the active surface of the semiconductor substrate; electrically conductive material electrically connected to an electrode of the at least one capacitor and extending to the back side surface of the semiconductor substrate; and longitudinally spaced, laterally extending conductive elements extending over the back side surface of the semiconductor substrate and electrically connected to the electrically conductive material, wherein each longitudinally spaced, laterally extending conductive element is at least partially embedded within a distinct region of dielectric material located on a side of the back side surface of the semiconductor substrate opposite the active surface, each distinct region of dielectric material comprising a boundary in contact with an adjacent region of dielectric material.
地址 Boise ID US