| 摘要 |
A preparation method for a thin film transistor and an array substrate, an array substrate, and a display apparatus are provided. The preparation method for a thin film transistor comprises: forming a first photoresist pattern (111) on an active layer thin film (1040), where the first photoresist pattern (111) comprises a first-thickness photoresist (1111) and a second-thickness photoresist (1112); etching the active layer thin film (1040) by using the first photoresist pattern (111) as a mask, to form an active layer (104); ashing the first photoresist pattern (111), so as to remove the second-thickness photoresist (1112) and thin the first-thickness photoresist (1111), forming a second photoresist pattern (112), and etching a source-drain electrode thin film (1050) by using the second photoresist pattern (112) as a mask. The preparation method protects the active layer from a source-drain etchant by using photoresist patterns, avoiding affecting use of an etch-stopping layer, and significantly simplifying a preparation process. |
