| 发明名称 | Stress relaxed buffer layer on textured silicon surface | ||
| 摘要 | A method of forming a stress relaxed buffer layer (SRB) on a textured or grooved silicon (Si) surface and the resulting device are provided. Embodiments include forming a textured surface in an upper surface of a Si wafer; epitaxially growing a low-temperature seed layer on the textured surface of the Si wafer; depositing a SRB layer over the low-temperature seed layer; and planarizing an upper surface of the SRB layer. | ||
| 申请公布号 | US9558943(B1) | 申请公布日期 | 2017.01.31 |
| 申请号 | US201514797531 | 申请日期 | 2015.07.13 |
| 申请人 | GLOBALFOUNDRIES INC. | 发明人 | Pawlak Bartlomiej Jan |
| 分类号 | H01L21/02;H01L21/321;H01L29/06;H01L29/201;H01L29/161 | 主分类号 | H01L21/02 |
| 代理机构 | Ditthavong & Steiner, P.C. | 代理人 | Ditthavong & Steiner, P.C. |
| 主权项 | 1. A method comprising: forming a textured or V-grooved surface in an upper surface of a silicon (Si) wafer, wherein the step of forming the textured or V-grooved surface on the upper surface of the Si wafer includes: forming pyramids in the upper surface of the Si wafer by etching, wherein the pyramids have a height less than 300 nm and a Si <111> surface; epitaxially growing a low-temperature seed layer on the textured surface of the Si wafer; depositing a stress relaxed buffer (SRB) layer over the low-temperature seed layer; and planarizing an upper surface of the SRB layer. | ||
| 地址 | Grand Cayman KY | ||