Nano multilayer film, field effect tube, sensor, random accessory memory and preparation method

摘要

A nano multilayer film of electrical field modulation type, a field effect transistor of electrical field modulation type, an electrical field sensor of switch type, and a random access memory of electrical field drive type can obtain an electro-resistance effect in an electrical field modulation multilayer film at room temperature. The nano multilayer film includes in succession from bottom to top a bottom layer, a substrate, a bottom layer, a functional layer, a buffer layer, an insulation layer, a conductive layer, and a cap layer. The buffer layer and the insulation layer can be selectively added as required when the conductive layer is made of a magnetic metal. The effect of influencing and changing the conductivity of the metal layer and thus adjusting the change in the resistance of the devices can obtain different resistance states corresponding to different electrical fields and achieving an electro-resistance effect.

主权项

1. A nano multilayer film of electrical field modulation type, characterized by comprising in succession from bottom to top: a bottom layer; a substrate; a buffer layer; an insulating barrier layer; a conductive layer; and a cap layer, wherein the bottom layer is of a conductive material and, as a lower electrode, is used for applying an electrical field onto the substrate; the substrate is of a ferroelectric or multi-ferric material which can alter and regulate the intensity and the direction of electrical polarization under the action of an electrical field; the buffer layer, as an upper electrode, is used for applying an electrical field onto the ferroelectric material or the multi-ferric material, and is a non-magnetic metal layer; the insulating barrier layer is of an oxide; the cap layer, as a protective layer, prevents the oxidation of the conductive layer; by applying an electrical field between the bottom layer and the buffer layer, the intensity and the direction of electrical polarization of the substrate change, which influences and changes an in-plane conductivity of the conductive layer, so that different resistance states corresponding to different electrical fields can be obtained, thereby achieving a reversible ER effect.