Conduction layer for stacked CIS charging prevention

摘要

A semiconductor device includes a first semiconductor chip comprising a first metallic structure and a second semiconductor chip comprising a second metallic structure. The second semiconductor chip is bonded with the first semiconductor chip by a first conductive plug. A second conductive plug extends from the first metallic structure and into a substrate of the first semiconductor chip. The first conductive plug connects the first metallic structure and the second metallic structure, wherein a conductive liner is along a sidewall of the first conductive plug or the second conductive plug.

主权项

1. A semiconductor device, comprising:
a first semiconductor chip comprising:
a first surface;a second surface opposite to the first surface;a substrate between the first surface and the second surface; anda first metallic structure above the first surface and electrically connected to the substrate; a second semiconductor chip comprising a second metallic structure and bonded with the first semiconductor chip on the second surface; a first conductive plug extending from the first semiconductor chip to the second semiconductor chip, and landing on the second metallic structure; a second conductive plug extending from the first metallic structure and into the substrate; and a conductive liner only along a portion of a sidewall of the first conductive plug surrounded by the substrate.