Three-dimensional semiconductor memory device

摘要

A three-dimensional (3D) semiconductor memory device and a method for fabricating the same, the device including insulating layers stacked on a substrate; horizontal structures between the insulating layers, the horizontal structures including gate electrodes, respectively; vertical structures penetrating the insulating layers and the horizontal structures, the vertical structures including semiconductor pillars, respectively; and epitaxial patterns, each of the epitaxial patterns being between the substrate and each of the vertical structures, wherein a minimum width of the epitaxial pattern is less than a width of a corresponding one of the vertical structures.

主权项

1. A three-dimensional (3D) semiconductor memory device, comprising:
a lower structure including a lower gate pattern and a lower semiconductor pattern penetrating the lower gate pattern, the lower semiconductor pattern being connected to a substrate; and an upper structure including upper gate patterns stacked on the lower structure, an upper semiconductor pattern penetrating the upper gate patterns, and a vertical insulator between the upper semiconductor pattern and the upper gate patterns, the upper semiconductor pattern being connected to the lower semiconductor pattern, wherein the lower semiconductor pattern has a rounded sidewall adjacent to the lower gate pattern, and wherein the lower semiconductor pattern includes an epitaxial pattern.