发明名称 |
METHOD FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL |
摘要 |
In a method for manufacturing a group 13 nitride crystal, a seed crystal made of a group 13 nitride crystal is arranged in a mixed melt containing an alkali metal and a group 13 element, and nitrogen is supplied to the mixed melt to grow the group 13 nitride crystal on a principal plane of the seed crystal. The seed crystal is manufactured by vapor phase epitaxy. At least a part of contact members coming into contact with the mixed melt in a reaction vessel accommodating the mixed melt is made of Al2O3. An interface layer having a photoluminescence emission peak whose wavelength is longer than the wavelength of a photoluminescence emission peak of the grown group 13 nitride crystal is formed between the seed crystal and the grown group nitride crystal. |
申请公布号 |
EP3119929(A1) |
申请公布日期 |
2017.01.25 |
申请号 |
EP20150765775 |
申请日期 |
2015.02.19 |
申请人 |
Ricoh Company, Ltd. |
发明人 |
HAYASHI, Masahiro;SATOH, Takashi;MIYOSHI, Naoya;WADA, Junichi;SARAYAMA, Seiji |
分类号 |
C30B19/06;C30B9/10;C30B19/02;C30B19/12;C30B29/40 |
主分类号 |
C30B19/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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