Lateral bipolar junction transistors on a silicon-on-insulator substrate with a thin device layer thickness

摘要

Methods of forming bipolar device structures and bipolar device structures. An opening may be formed in a device layer of a silicon-on-insulator substrate that extends to a buried insulator layer of the silicon-on-insulator substrate. An intrinsic base layer may be grown within the device layer opening by lateral growth on opposite first and second sidewalls of the device layer bordering the opening. A first collector of a first bipolar junction transistor of the device structure may be formed at a first spacing from the first sidewall. A second collector of a second bipolar junction transistor of the device structure may be formed at a second spacing from the second sidewall. An emitter, which is shared by the first bipolar junction transistor and the second bipolar transistor, is formed inside the opening. Portions of the intrinsic base layer may supply respective intrinsic bases for the first and second bipolar junction transistors.

主权项

1. A method of forming a bipolar device structure, the method comprising:
forming an opening in a single-crystal device layer of a silicon-on-insulator substrate that includes a first sidewall and a second sidewall that each extend to a buried insulator layer of the silicon-on-insulator substrate; epitaxially growing a first portion of an intrinsic base layer within the opening in the device layer by lateral epitaxial growth and a selective epitaxial growth process from the device layer at the first sidewall of the opening; and epitaxially growing a second portion of the intrinsic base layer within the opening in the device layer by lateral epitaxial growth and the selective epitaxial growth process from the device layer at the second sidewall of the opening, wherein the intrinsic base layer is comprised of a single-crystal semiconductor material.