Memory system and method of driving memory system using zone voltages

摘要

A method is provided for driving a nonvolatile memory device, including multiple strings, where each string is formed by penetrating plate-shaped word lines stacked on a substrate. The method includes configuring the word lines of a string in multiple zones based on zone configuration information, and applying zone voltages to the zones, respectively. The zone configuration information is varied according to a mode of operation.

主权项

1. A method of driving a nonvolatile memory device, comprising a plurality of strings, each string formed by penetrating plate-shaped word lines stacked on a substrate, the method comprising:
configuring the word lines of a string in a plurality of zones based on zone configuration information, wherein each of the zones as configured by the zone configuration information includes at least one word line, and at least two word lines are grouped in a same zone among the plurality of zones; and applying respective zone voltages to the zones such that the word lines of each zone receive a same respective zone voltage, wherein the zone configuration information is varied between at least a first mode of operation and a second mode of operation, wherein a grouping of at least two word lines in the same zone of the first mode of operation is different than a grouping of at least two word lines in the same zone of the second mode of operation.