HORIZONTAL GATE ALL AROUND DEVICE ISOLATION

摘要

Embodiments described herein generally relate to methods and apparatus for horizontal gate all around (hGAA) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. The different materials may be silicon containing materials and one or more III/V materials. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.

主权项

1. A method of forming a semiconductor device, comprising:
forming a superlattice structure on a substrate, wherein the superlattice structure comprises:
a first material layer;a second material layer; anda third material layer; etching the superlattice structure; depositing a liner on the superlattice structure; depositing an oxide material layer on the substrate; and oxidizing at least one of the first material layer, the second material layer, or the third material layer to form a buried oxide layer, wherein the liner selectively prevents oxidation of two of the material layers preferentially to the material layer which forms the buried oxide.